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HGT1S7N60C3DS Datasheet 14A 600V UFS Series N-Channel IGBT

Manufacturer: Intersil (now Renesas)

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Datasheet Details

Part number	HGT1S7N60C3DS
Manufacturer	Intersil (now Renesas)
File Size	176.05 KB
Description	14A 600V UFS Series N-Channel IGBT
Download	HGT1S7N60C3DS Download (PDF)

Overview

HGTP7N60C3D, HGT1S7N60C3DS Data Sheet January 2000 File Number 4150.

Key Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching.

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